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概述

The MAX11008 controller is ideal for biasing RF LDMOS power devices found in cellular base stations. Each controller includes a high-side current-sense amplifier with programmable gains of 2, 10, and 25 to monitor the LDMOS drain current over the range of 20mA to 5A. Two external diode-connected transistors monitor the LDMOS temperatures while internal temperature sensor measures the local die temperature of the MAX11008. A 12-bit ADC converts the programmable-gain amplifier (PGA) outputs, external temperature readings, and two auxiliary inputs. Two gate-drive channels, each consisting of a 12-bit DAC and a gate drive amplifier with a gain of 2, generate a positive gate voltage to bias the LDMOS devices. Each gate-drive output supports up to ±2mA of gate current. The gate-drive amplifier is current-limited and features a fast clamp to zero independent of the serial interface. An on-chip, non-volatile EEPROM stores lookup tables and register information. An I²C- compatible serial interface or an SPI™-compatible interface are available to communicate with the device. The MAX11008 operates with a 4.75V to 5.25V analog supply. The device is available in a 48-pin 7mm x 7mm thin QFN package over the -40°C to +85°C extended temperature range.

关键特性		应用/使用
On-Chip 4kbit EEPROM for Storing LDMOS Bias Characteristics Integrated High-Side Current Sense PGA with Gain of 2, 10, or 25 ±0.5% Accuracy for Sense Voltage Between 20mV and 250mV Full-Scale Sense Voltage of 100mV (250mV) with Gain of 25 (10) Common-Mode Range of LDMOS Drain Voltage: 5V to 32V Adjustable Low-Noise 0-5V Output Gate Bias Voltage Range Fast Clamp to Zero for LDMOS Protection 12-bit DAC Control of Gate with Temperature Adjustment Internal Die Temperature Measurement External Temperature Measurement by Remote Diode On-Chip 12-bit ADC to Measure Temperature, Current, and Voltages Within the System		蜂窝基站 工业过程控制

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