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Maxim >
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高频ASIC
RF and Wireless |
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Process Technology
Maxim High-Frequency Processes  RF BiCMOS
MBiC-2, F60, and GST-4P, representing our second-generation RF BiCMOS process family, offer high-speed, double-poly-silicon SiGe bipolar transistors, high-speed Si CMOS transistors, and high-quality passives. MBiC-2 has been optimized for portable wireless applications up to 5.8GHz. Fiber applications demanding higher speeds of up to 10Gbps are supported with F60. Finally, GST-4P addresses high-linearity, high-breakdown applications such as wireless power amplifiers.
Si RF BiCMOS
MBiC-1 offers high-speed, double-poly-silicon Si bipolar transistors and high-speed Si CMOS transistors. It is an excellent low-cost choice for high-volume, highly integrated wireless applications below 2.5GHz.
RF Bipolar
GST-35, our third generation RF bipolar process, has been optimized for both mobile and high-linearity applications. This allows for the integration of low-power transceiver circuits with power amplifiers.
GST-33/34 is our first-generation RF bipolar process optimized for wireless applications with low noise. These are not available for new designs.
GST-2 is the foundation of our bipolar processes. This very reliable and low-cost process is used in a wide variety of applications, such as wireless circuits up to 2.4GHz and fiber applications up to 2.5Gbps.
Complimentary Bipolar
CB-2 provides high-speed complementary NPN and vertical PNP transistors optimized for high-linearity cable and instrumentation applications.
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