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DS3070W
3.3V、单芯片、16Mb非易失SRAM，带有时钟
业内首款、也是唯一的单芯片、可回流焊接的NV SRAM模块
概述
完整的数据资料
(PDF, 284kB) 英文
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DS3070W由一个静态RAM、一个非易失(NV)控制器、一个2000年兼容的实时时钟(RTC)和一个内部可充电锂锰(ML)电池组成。这些组件封装在一个表面安装的256焊球BGA模块中。VCC 加电时，模块对ML电池充电，同时使用外部电源为时钟和SRAM供电，并允许修改时钟寄存器和SRAM的内容。当VCC 掉电或超出容限时，控制器即对存储器内容实施写保护，并改由电池为时钟和SRAM供电。DS3070W还含有一个电源监视器输出(/RST)和一个用户可编程的中断输出(/IRQ/FT)。
关键特性
应用/使用
单片、可回流焊、27mm x 27mm BGA封装
集成实时时钟
内置锂锰电池和充电器
VCC 超出容限后无条件对SRAM实施写保护
VCC 失效后自动切换至电池供电
内部电源检测器监测电源是否低于VCC 额定值(3.3V)
复位输出可用作微处理器(CPU)监控
工业级温度范围(-40°C至+85°C)
经过UL认证
Key Specifications:
Memory (EPROM, SRAM, EEPROM, ROM, NV SRAM)
Part Number
Memory Type
Memory Size
Bus Type
Real-Time Clock
DIP with Internal Battery
PowerCap Package
Battery Monitor
With GPIO
Single Piece Module
Features
Supply Voltage (min) (V)
Supply Voltage (max) (V)
RoHS Available
Package
Smallest Available Package (max w/pins) (mm2 )
Operating Temp. Range (°C)
Price**
DS3070W
NV SRAM
2M x 8
Parallel
Yes
No
No
No
No
Yes
3
3.6
Yes
MOD/256
729
-40 to +85
$48.93 @ 1k
See All Memory (EPROM, SRAM, EEPROM, ROM, NV SRAM) (69)
Key Specifications:
Timekeeping & Real-Time Clocks
Part Number
Functions
Time Format (hh = sec/100)
Date Format
Interface
Supply Voltage (V)
Memory Type
Memory Size (Bytes)
Number of Time of Day Alarms
Features
RoHS Available
Package
Smallest Available Package (max w/pins) (mm2 )
Operating Temp. Range (°C)
Price**
DS3070W
HH:MM:SS
YYYY-MM-DD
Bytewide
3.3
NV SRAM
2M
1
Yes
MOD/256
729
-40 to +85
$48.93 @ 1k
See All Timekeeping & Real-Time Clocks (86)
Notes:
** This pricing is BUDGETARY, for comparing similar parts. Prices are in
U.S. dollars and subject to change. Quantity pricing may vary
substantially and international prices may differ due to local
duties, taxes, fees, and exchange rates. For volume-specific prices
and delivery, please see the price and availability page
or contact an authorized distributor.
图表
典型工作电路
2006-10-17
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